Institute 1: Semiconductor Thin Films and Devices

500 nm mesa of a resonant tunneling transistor for digital applications and single electron tunneling
Scientific Program
Ion Technology
Semiconductor Films and Nanostructures
The institute investigates fundamental problems in semiconductor physics and in semiconductor materials.
In the device development alternative concepts are explored and property limits are explored.
The epitaxy of classical III/V compounds and of GaN is a broad activity. Electronic and optical properties of the grown layers are measured.
With the grown semiconductor layer systems devices are developed to explore e. g. the maximum transistor frequency and the minimum transistor cross section.
Resonant tunnel transistors are investigated to study the quantum mechanical limit in the smallest electronic devices.
With the standard semiconductor silicon vertical MOSFETs of 30 nm gate length are developed following different concepts.
Hybrid devices combining superconductor and semiconductor device physics are studied to get to devices with unusual properties.