ISG1-IT

The section Ion Technology (ISG1-IT) is part of the Institute ISG1 "Semiconductor Thin Films and Devices". ISG1 is one of four institutes, which form the department ISG, working on the physics of thin films and interfaces. ISG1-IT is a Center of Competence for the application of ion beam techniques especially in the field of thin film modification and characterization. It is a founding member of the regional nanoelectronics collaborative research center "CNI - The Center for Nanoelectronic Systems in Information Technology". ISG1- IT is focussed on the topics:
Silicon based materials e.g. strained silicon, silicides
High-k dielectrics,
Ferroelectrics for memories and
Innovative Si based NanoMOSFETs, e.g. Schottky barrier MOSFETs.
ISG1-IT operates four different accelerators with very specific performance and possibilities. In addition, a number of thin film deposition setups, including MBE, CVD, PLD and sputter machines are part of our equipment, which is part of the extended and powerful installations of the entire department. This allows us to epitaxially grow or deposit a wide range of different thin films and to lithographically structure, modify and characterize planar structures or nanoelectronic devices.